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Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating

Type:
Journal
Info:
Surface and Coatings Technology, Volume 259, Part A, 25 November 2014, Pages 98-101
Date:
2014-05-15
DOI:
http://dx.doi.org/10.1016/j.surfcoat.2014.05.005

Author Information

Name Institution
Jae-Hyung ParkHanyang University

Films

Plasma Co

Hardware used: Custom
Dicobalt Hexacarbonyl Tert-ButylAcetylene (CCTBA)
CAS#: 56792-69-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 120-200C

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI 680 FEAES

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Hitachi HD-2300A

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: -

Characteristic: Wetting Angle
Analysis: Sessile Drop Tests
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

TaN

Notes

PEALD Co for copper interconnect plating.
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