| 1 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 2 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
| 3 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 4 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 5 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
| 6 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 7 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 8 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 9 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 10 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 11 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
| 12 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 13 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
| 14 | Topographically selective deposition |
| 15 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 16 | Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors |
| 17 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 18 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 19 | Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars |
| 20 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 21 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 22 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 23 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 24 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
| 25 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
| 26 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 27 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
| 28 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 29 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 30 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 31 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
| 32 | Plasma enhanced atomic layer deposition of gallium sulfide thin films |
| 33 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
| 34 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
| 35 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 36 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
| 37 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 38 | Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content |
| 39 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 40 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 41 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 42 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 43 | Plasma enhanced atomic layer deposition of zinc sulfide thin films |
| 44 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 45 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 46 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 47 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 48 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 49 | Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate |
| 50 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 51 | Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process |
| 52 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 53 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 54 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 55 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 56 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 57 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 58 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 59 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 60 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
| 61 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 62 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 63 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
| 64 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
| 65 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 66 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
| 67 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 68 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 69 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 70 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 71 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 72 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 73 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 74 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 75 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 76 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 77 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 78 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 79 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 80 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
| 81 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
| 82 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 83 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 84 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
| 85 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 86 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 87 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
| 88 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 89 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
| 90 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 91 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 92 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
| 93 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 94 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 95 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 96 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
| 97 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
| 98 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
| 99 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 100 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 101 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 102 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 103 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 104 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 105 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 106 | Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition |
| 107 | Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance |
| 108 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 109 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 110 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
| 111 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 112 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 113 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 114 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 115 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 116 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 117 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 118 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 119 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 120 | Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition |
| 121 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 122 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 123 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 124 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 125 | Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications |
| 126 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 127 | Very high frequency plasma reactant for atomic layer deposition |
| 128 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
| 129 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 130 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 131 | Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte |
| 132 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 133 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 134 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 135 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 136 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
