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Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 20(3), May/Jun 2002
Date:
2002-02-15
DOI:
http://dx.doi.org/10.1116/1.1469009

Author Information

Name Institution
Hyungjun KimIBM
S. M. RossnagelIBM

Films

Plasma Ti

Hardware used: Custom
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: Inficon

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Inficon Quadrex 200

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: EG&G Optical Multichannel Analyzer III

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Pt
Cu
Al
Silicon
Amorphous C

Notes

Nice reaction kinetics discussion.
H2 plasma can etch Si or amorphous C.
88