| 1 | A route to low temperature growth of single crystal GaN on sapphire |
| 2 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 3 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 4 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 5 | Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition |
| 6 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 7 | Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition |
| 8 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 9 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 10 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 11 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 12 | Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition |
| 13 | Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition |
| 14 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 15 | Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) |
| 16 | Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys |
| 17 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 18 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 19 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 20 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 21 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 22 | Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries |
| 23 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 24 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 25 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 26 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 27 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 28 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 29 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 30 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 31 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 32 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 33 | Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition |
| 34 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 35 | Thin film GaP for solar cell application |
| 36 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |