Mobility Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Mobility returned 36 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A route to low temperature growth of single crystal GaN on sapphire
2Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
3Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
4Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
5Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
6Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
7Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
8Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD
9Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
10Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
11Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
12Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
13Fast Flexible Plastic Substrate ZnO Circuits
14Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
15Gate Insulator for High Mobility Oxide TFT
16Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
17High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
18High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
19Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
20Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
21Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
22Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
23Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
24Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
25Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
26Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
27Perspectives on future directions in III-N semiconductor research
28Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
29Plasma-Modified Atomic Layer Deposition
30Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
31Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
32The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
33The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
34Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
35Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization


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