Carrier Concentration Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Carrier Concentration returned 38 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
2Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
3Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
4Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
5Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
6Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
7Capacitance characterization of GaP/n-Si structures grown by PE-ALD
8Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
9Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
10Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
11Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
12Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
13Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
14Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
15Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
16High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
17Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
18Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
19Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
20Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
21Microwave properties of superconducting atomic-layer deposited TiN films
22n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
23P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
24Perspectives on future directions in III-N semiconductor research
25Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
26Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
27Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
28Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
29Plasma-Modified Atomic Layer Deposition
30Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
31Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
32Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
33Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
34Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
35The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
36The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
37Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
38Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering