Carrier Concentration Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Carrier Concentration returned 35 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
2Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
3Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
4Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
5Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
6Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
7Capacitance characterization of GaP/n-Si structures grown by PE-ALD
8Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
9Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
10Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
11Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
12Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
13High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
14Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
15Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
16Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
17Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
18Microwave properties of superconducting atomic-layer deposited TiN films
19n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
20P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
21Perspectives on future directions in III-N semiconductor research
22Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
23Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells
24Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
25Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
26Plasma-Modified Atomic Layer Deposition
27Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
28Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
29Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
30Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
31Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
32The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
33The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
34Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
35Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering