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Interface Trap Density Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interface Trap Density returned 99 record(s).

NumberTitle
1Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
2Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
3Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
4Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
5Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
6Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
7AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
8Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
9Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
10Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
11Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
12Improved understanding of recombination at the Si/Al2O3 interface
13Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
14ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
15Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
16Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
17The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
18Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
19A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
20A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
21Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
22Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
23Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
24High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
25Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
26Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
27Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
28Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
29Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
30Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
31Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
32Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
33Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
34Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
35Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
36Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
37Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
38Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
39The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
40Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
41Very high frequency plasma reactant for atomic layer deposition
42Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
43High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
44Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
45Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
46Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
47Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
48Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
49Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
50Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
51Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
52Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
53Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
54High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
55Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
56Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
57In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
58Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
59An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
60Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
61Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
62MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
63Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
64Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
65High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
66Low-thermal budget flash light annealing for Al2O3 surface passivation
67Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
68Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
69Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
70Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
71Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
72Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
73Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
74High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
75Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
76Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
77Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
78HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
79Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
80Nitride passivation of the interface between high-k dielectrics and SiGe
81Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
82In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
83Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
84Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
85Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
86Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
87Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
88Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
89Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
90Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
91Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
92Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
93Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
94Silicon surface passivation with atomic layer deposited aluminum nitride
95Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
96Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
97Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
98Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
99Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces