| 1 | Low-temperature direct synthesis of high quality WS2 thin films by plasma-enhanced atomic layer deposition for energy related applications |
| 2 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 3 | Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
| 4 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 5 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 6 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 7 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 8 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 9 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 10 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 11 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
| 12 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 13 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 14 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 15 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 16 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 17 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 18 | Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films |
| 19 | Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application |
| 20 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
| 21 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
| 22 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 23 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 24 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 25 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
| 26 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 27 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 28 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
| 29 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 30 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 31 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
| 32 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 33 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 34 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 35 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 36 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 37 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 38 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
| 39 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 40 | Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia |
| 41 | Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition |
| 42 | Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes |
| 43 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 44 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 45 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
| 46 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 47 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 48 | Carbon content control of silicon oxycarbide film with methane containing plasma |
| 49 | Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films |
| 50 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 51 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 52 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 53 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 54 | Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition |
| 55 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 56 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 57 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 58 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
| 59 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 60 | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition |
| 61 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 62 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 63 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 64 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 65 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 66 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 67 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 68 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
| 69 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
| 70 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
| 71 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 72 | Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition |
| 73 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 74 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
| 75 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 76 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 77 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 78 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 79 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 80 | Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors |
| 81 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
| 82 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 83 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
| 84 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
