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Breakdown Voltage Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Breakdown Voltage returned 84 record(s).

NumberTitle
1Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
2The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
3Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
4Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
5Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
6Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
7Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
8Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
9Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
10Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
11Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
12Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
13Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
14Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
15Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
16Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
17Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
18Densification of Thin Aluminum Oxide Films by Thermal Treatments
19Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
20Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
21Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
22Fast PEALD ZnO Thin-Film Transistor Circuits
23Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
24Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
25Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
26Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
27Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
28Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
29A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
30Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
31Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
32Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
33Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
34Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
35Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
36Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
37Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
38Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
39Innovative remote plasma source for atomic layer deposition for GaN devices
40Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
41Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
42High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
43Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
44Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
45Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
46Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
47Propagation Effects in Carbon Nanoelectronics
48The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
49Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
50Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
51Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
52Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
53Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
54Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
55Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
56AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
57ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
58Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
59Annealing behavior of ferroelectric Si-doped HfO2 thin films
60Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
61ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
62Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
63Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]
64Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
65Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
66Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
67PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
68Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
69Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
70Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
71Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
72Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
73Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
74A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
75Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
76High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
77A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
78ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
79Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
80Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
81Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
82Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
83Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
84Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage