Stress Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Stress returned 36 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
2Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
3Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
4Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
5Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
6Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
7Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
8Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
9Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2
10PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
11Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
12Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
13Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
14Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
15Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
16Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
17Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
18Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
19Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
20Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
21Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
22Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
23Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
24Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
25Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
26Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
27Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
28Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
29Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
30Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
31Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
32Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
33Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
34Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
35Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
36Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane