Stress Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Stress returned 36 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
2Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
3Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
4Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
5Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
6Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
7Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
8Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
9Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
10Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
11Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
12Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
13Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
14Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
15Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
16Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
17Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
18Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
19Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
20Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
21Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
22Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
23Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
24Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
25Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
26Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
27Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
28Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2
29Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
30Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
31Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
32Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
33PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
34Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
35Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
36Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition