Wet Etch Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Wet Etch Resistance returned 17 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
2	Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
3	Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
4	Challenges in spacer process development for leading-edge high-k metal gate technology
5	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
6	Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
7	Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
8	Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
9	Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
10	Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
11	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
12	Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
13	Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
14	Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
15	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
16	Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
17	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

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