Wet Etch Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Wet Etch Resistance returned 17 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
2Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
3Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
4Challenges in spacer process development for leading-edge high-k metal gate technology
5Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
6Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
7Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
8Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
9Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
10Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
11Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
12Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
13Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
14Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
15The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
16Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
17Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies


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