Wet Etch Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Wet Etch Resistance returned 28 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
2Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
3Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
4Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
5Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
6Challenges in spacer process development for leading-edge high-k metal gate technology
7Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
8Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
9Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
10Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
11Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
12Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
13Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
14Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
15Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
16Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
17Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
18Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
19Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
20The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
21Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
22Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
23Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
24Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
25Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
26Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
27Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
28Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time