Wet Etch Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Wet Etch Resistance returned 23 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

1Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
2Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
3Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
4Challenges in spacer process development for leading-edge high-k metal gate technology
5Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
6Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
7Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
8Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
9Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
10Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
11Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
12Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
13Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
14Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
15Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
16Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
17Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
18Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
19Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
20Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
21The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
22Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
23Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies