Wet Etch Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Wet Etch Resistance returned 29 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
2Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
3Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
4Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
5Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
6Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
7Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
8Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
9Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
10Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
11Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
12Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
13Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
14High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
15Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
16Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
17The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
18Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
19Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
20Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
21Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
22Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
23Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
24Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
25Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
26Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
27Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
28Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
29Challenges in spacer process development for leading-edge high-k metal gate technology