Wet Etch Resistance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Wet Etch Resistance returned 30 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers
2Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
3Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
4Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
5Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
6Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
7Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
8Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
9Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor
10Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance
11Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
12Challenges in spacer process development for leading-edge high-k metal gate technology
13Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
14Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
15Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
16Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
17Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
18Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
19High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
20Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
21Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
22Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
23Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
24Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
25Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
26Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
27Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
28Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
29The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
30Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties