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Interfacial Layer Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interfacial Layer returned 75 record(s).

NumberTitle
1Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
2Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
3Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
4High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
5Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
6Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
7Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
8Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
9Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
10A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
11Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
12Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
13Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
14Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
15Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
16Atomic layer deposition of YMnO3 thin films
17Oxygen migration in TiO2-based higher-k gate stacks
18Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
19Passivation effects of atomic-layer-deposited aluminum oxide
20Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
21Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
22Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
23Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
24Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
25Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
26PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
27Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
28In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
29Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
30Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
31Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
32Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
33Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
34Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
35ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
36Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
37Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
38Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
39Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
40Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
41Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
42Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
43Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
44Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
45PEALD ZrO2 Films Deposition on TiN and Si Substrates
46Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
47Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
48Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
49Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
50Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
51Plasma-enhanced atomic layer deposition of Co on metal surfaces
52A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
53Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
54Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
55Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
56Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
57Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
58Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
59Hafnia and alumina on sulphur passivated germanium
60Formation of aluminum nitride thin films as gate dielectrics on Si(100)
61PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
62Characteristics of HfO2 thin films grown by plasma atomic layer deposition
63Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
64Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
65Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
66Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
67PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
68Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
69Improved understanding of recombination at the Si/Al2O3 interface
70Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
71Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
72Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
73Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
74Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
75The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD