Etch Rate Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Etch Rate returned 19 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
2Composite materials and nanoporous thin layers made by atomic layer deposition
3Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
4Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
5Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
6High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
7Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
8Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
9Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
10Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
11Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
12Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
13PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
14Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
15A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
16A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
17Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
18Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
19Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride