Etch Rate Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Etch Rate returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
2	Composite materials and nanoporous thin layers made by atomic layer deposition
3	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
4	DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
5	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
6	Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
7	High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
8	Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
9	Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
10	Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
11	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
12	Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD

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I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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