CET, capacitance equivalent thickness Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing CET, capacitance equivalent thickness returned 19 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
2Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
3Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
4Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
5Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
6Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
7HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
8Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
9Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
10Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
11Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
12In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
13Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
14Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
15Oxygen migration in TiO2-based higher-k gate stacks
16Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
17Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
18Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
19Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications