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Interface State Density Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interface State Density returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
2Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
3Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
4Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
5Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
6Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
7Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
8Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
9Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
10Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
11Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
12Passivation effects of atomic-layer-deposited aluminum oxide
13Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
14Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
15Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
16Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System

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