| 1 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 2 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
| 3 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 4 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 5 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 6 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 7 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 8 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
| 9 | Low-Temperature Phase-Controlled Synthesis of Titanium Di- and Tri-sulfide by Atomic Layer Deposition |
| 10 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
| 11 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
| 12 | Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma |
| 13 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
| 14 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 15 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 16 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
| 17 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 18 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 19 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
| 20 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
| 21 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
| 22 | Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma |
| 23 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 24 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
| 25 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 26 | Innovative remote plasma source for atomic layer deposition for GaN devices |
| 27 | Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy |
| 28 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
| 29 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
| 30 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 31 | Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition |
| 32 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
| 33 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 34 | Low temperature plasma enhanced deposition of GaP films on Si substrate |
| 35 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
| 36 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 37 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
| 38 | Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution |
| 39 | Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition |
| 40 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 41 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
| 42 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
| 43 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 44 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 45 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
| 46 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 47 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 48 | Development and characterization of an atmospheric pressure plasma reactor compatible with spatial ALD |
| 49 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 50 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 51 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 52 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
| 53 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 54 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 55 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 56 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 57 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 58 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 59 | Plasma enhanced atomic layer deposition of zinc sulfide thin films |
