Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures

Type:
Journal
Info:
Phys. Status Solidi C 12, No.4-5, 394-398 (2015)
Date:
2015-01-20

Author Information

Name Institution
Çağla ÖzgitBilkent University
Eda GoldenbergBilkent University
S. BolatBilkent University
Burak TekcanBilkent University
Fatma KayaciBilkent University
Tamer UyarBilkent University
Ali Kemal OkyayBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN



Plasma GaN





Plasma InN



Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Optical Properties
Analysis: Optical Transmission

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Substrates

Nylon 6,6
Silicon

Keywords

Notes

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