Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures

Type:
Journal
Info:
2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2015-04-21
DOI:
http://dx.doi.org/10.1109/ELNANO.2015.7146876

Author Information

Name Institution
Necmi BiyikliBilkent University
Çağla ÖzgitBilkent University
Eda GoldenbergBilkent University
Ali HaiderBilkent University
Seda KizirBilkent University
Tamer UyarBilkent University
S. BolatBilkent University
Burak TekcanBilkent University
Ali Kemal OkyayBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 200C

Plasma AlxGa1-xN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 200C

Plasma InN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Tecnai G2 F30

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 200 FEG

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Nylon 6,6
Si(100)

Notes

1390