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Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
Type:
Journal
Info:
2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2015-04-21
Author Information
| Name | Institution |
|---|---|
| Necmi Biyikli | Bilkent University |
| Çağla Özgit | Bilkent University |
| Eda Goldenberg | Bilkent University |
| Ali Haider | Bilkent University |
| Seda Kizir | Bilkent University |
| Tamer Uyar | Bilkent University |
| S. Bolat | Bilkent University |
| Burak Tekcan | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
Films
Plasma AlN
Plasma GaN
Plasma AlxGa1-xN
Plasma InN
Plasma InN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Substrates
| Nylon 6,6 |
| Si(100) |
Notes
| 1390 |