Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 9620-9630
Date:
2015-08-19
Author Information
| Name | Institution |
|---|---|
| Ali Haider | Bilkent University |
| Seda Kizir | Bilkent University |
| Çağla Özgit | Bilkent University |
| Eda Goldenberg | Bilkent University |
| Shahid Ali Leghari | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma GaN
Plasma InN
Plasma InGaN
Plasma AlN
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Substrates
| Silicon |
| Quartz |
Notes
| Meaglow hollow cathode plasma source. |
| 506 |