Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-11-21

Author Information

Name Institution
S. BolatBilkent University
Burak TekcanBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films

Thermal Al2O3


Plasma GaN



Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Contact Resistance
Analysis: -

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: -

Characteristic: Mobility
Analysis: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Substrates

GaN
Al2O3

Keywords

GaN
TFT, Thin Film Transistor
Photodetectors

Notes

Hollow-cathode plasma source.
Ultratech Fiji PEALD GaN study with various annealing and photodetector results.
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