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Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-11-21
DOI:
http://dx.doi.org/10.1116/1.4903365

Author Information

Name Institution
S. BolatBilkent University
Burak TekcanBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: Keithley 4200-SCS

Characteristic: Contact Resistance
Analysis: -
Diagnostic: Keithley 4200-SCS

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: -

Characteristic: Mobility
Analysis: -
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

GaN
Al2O3

Notes

Hollow-cathode plasma source.
Ultratech Fiji PEALD GaN study with various annealing and photodetector results.
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