Resistive Switching Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Resistive Switching returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
2Bipolar resistive switching in amorphous titanium oxide thin film
3Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
4Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
5Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
6In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
7Study on the resistive switching time of TiO2 thin films
8Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
9Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
10A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
11The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
12In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
13Flexible Memristive Memory Array on Plastic Substrates
14Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
15SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
16Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions