Resistive Switching Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Resistive Switching returned 16 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
2Bipolar resistive switching in amorphous titanium oxide thin film
3Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
4Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
5Study on the resistive switching time of TiO2 thin films
6In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
7SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
8Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
9Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
10Flexible Memristive Memory Array on Plastic Substrates
11The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
12Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
13Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
14Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
15In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
16A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application