Electrical Properties Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Electrical Properties returned 17 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1MANOS performance dependence on ALD Al2O3 oxidation source
2Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
3Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
4Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
5Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
6Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
7Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
8Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
9Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
10New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
11Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
12Nitride memristors
13In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
14Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films
15Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
16Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon