Publication Information

Title:
Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A110 (2018)
Date:
2017-11-14

Author Information

Name Institution
Mustafa AlevliMarmara University
N. GungorMarmara University

Films

Plasma AlN



Plasma GaN



Plasma InN



Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Vibrational Properties
Analysis: FTIR Spectroscopic Ellipsometry

Characteristic: Optical Absorption
Analysis: Optical Absorption

Substrates

Si(100)

Keywords

Notes

1052