Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures

Type:
Journal
Info:
J. Mater. Chem. C, 2014,2, 2123-2136
Date:
2014-01-07

Author Information

Name Institution
Çağla ÖzgitBilkent University
Eda GoldenbergBilkent University
Ali Kemal OkyayBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN



Plasma GaN





Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Transmittance
Analysis: Optical Transmission

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Sample Preparation
Analysis: FIB, Focused Ion Beam

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Sapphire
Si(100)
Si(111)

Keywords

III-Nitride

Notes

Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water.
Si substrates received HF dip, DI-water rinse, and N2 dry.
Meaglow Ltd hollow cathode RF-plasma source was used.
MicroTorr gas purifiers used.
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