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Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures

Type:
Journal
Info:
J. Mater. Chem. C, 2014,2, 2123-2136
Date:
2014-01-07
DOI:
http://dx.doi.org/10.1039/C3TC32418D

Author Information

Name Institution
Çağla ÖzgitBilkent University
Eda GoldenbergBilkent University
Ali Kemal OkyayBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma AlxGa1-xN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma AlxGa1-xN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: Physical Electronics Quadrupole SIMS

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Transmittance
Analysis: Optical Transmission
Diagnostic: Ocean Optics HR4000CG-UV-NIR

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Sample Preparation
Analysis: FIB, Focused Ion Beam
Diagnostic: FEI Nova 600i Nanolab

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Substrates

Sapphire
Si(100)
Si(111)

Notes

Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water.
Si substrates received HF dip, DI-water rinse, and N2 dry.
Meaglow Ltd hollow cathode RF-plasma source was used.
MicroTorr gas purifiers used.
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