Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
Type:
Journal
Info:
J. Mater. Chem. C, 2014,2, 2123-2136
Date:
2014-01-07
Author Information
| Name | Institution |
|---|---|
| Çağla Özgit | Bilkent University |
| Eda Goldenberg | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma AlN
Plasma AlN
Plasma GaN
Plasma GaN
Plasma AlxGa1-xN
Plasma AlxGa1-xN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Sample Preparation
Analysis: FIB, Focused Ion Beam
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Sapphire |
| Si(100) |
| Si(111) |
Notes
| Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water. |
| Si substrates received HF dip, DI-water rinse, and N2 dry. |
| Meaglow Ltd hollow cathode RF-plasma source was used. |
| MicroTorr gas purifiers used. |
| 132 |