Publication Information

Title: Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A123 (2016)

Date: 2015-11-06

DOI: http://dx.doi.org/10.1116/1.4936072

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 450C

97-94-9

7727-37-9

1333-74-0

Deposition Temperature = 450C

97-94-9

7727-37-9

Deposition Temperature = 450C

1115-99-7

7727-37-9

1333-74-0

Deposition Temperature = 450C

3385-78-2

7727-37-9

Deposition Temperature = 450C

97-94-9

3385-78-2

7727-37-9

Deposition Temperature = 450C

97-94-9

1115-99-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

PSIA XE-100E

Transmittance

Optical Transmission

Ocean Optics HR4000CG-UV-NIR

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Substrates

Silicon

Quartz

Keywords

Notes

414



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