Publication Information

Title:
Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
Type:
Journal
Info:
Applied Physics Letters 104, 243505 (2014)
Date:
2014-06-04

Author Information

Name Institution
S. BolatBilkent University
Çağla ÖzgitBilkent University
Burak TekcanBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films


Thermal Al2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Transistor Characteristics
Analysis: -

Substrates

Silicon

Keywords

Notes

Substrates RCA cleaned followed by HF-dip prior to deposition.
Meaglow Ltd hollow cathode RF-plasma source was used.
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