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Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

Type:
Journal
Info:
Applied Physics Letters 104, 243505 (2014)
Date:
2014-06-04
DOI:
http://dx.doi.org/10.1063/1.4884061

Author Information

Name Institution
S. BolatBilkent University
Çağla ÖzgitBilkent University
Burak TekcanBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Transistor Characteristics
Analysis: -
Diagnostic: Keithley 4200-SCS

Substrates

Silicon

Notes

Substrates RCA cleaned followed by HF-dip prior to deposition.
Meaglow Ltd hollow cathode RF-plasma source was used.
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