Interfacial Layer Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Interfacial Layer returned 37 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
2A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
3Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
4Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
5Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
6Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
7Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
8Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
9Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
10Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
11Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
12Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
13Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
14Hafnia and alumina on sulphur passivated germanium
15High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
16Improved understanding of recombination at the Si/Al2O3 interface
17Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
18Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
19In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
20Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
21Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
22Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
23Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
24Oxygen migration in TiO2-based higher-k gate stacks
25Passivation effects of atomic-layer-deposited aluminum oxide
26PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
27PEALD ZrO2 Films Deposition on TiN and Si Substrates
28PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
29Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
30Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
31Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
32Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
33Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
34Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
35Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
36Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
37Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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