Publication Information

Title: Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing

Type: Journal

Info: Appl. Phys. Lett. 103, 263115 (2013)

Date: 2013-12-12

DOI: http://dx.doi.org/10.1063/1.4858964

Author Information

Name

Institution

University of California - San Diego

University of California - San Diego

University of California - San Diego

Films

Plasma Pt using Picosun R200

Deposition Temperature = 300C

94442-22-5

7782-44-7

Plasma Pt using Picosun R200

Deposition Temperature = 300C

94442-22-5

7782-44-7

75-24-1

Thermal HfO2 using Picosun R200

Deposition Temperature = 200C

19962-11-9

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Images

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Resistivity, Sheet Resistance

TLM, Transmission Line Measurement

Unknown

Thickness

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Interfacial Layer

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Transistor Characteristics

Unknown

Unknown

Substrates

SiO2

HfO2

Keywords

PEALD Film Development

Nanowire Transistors

Nucleation

Notes

Picosun SUNALE R-200 Pt with reduced nucleation delay through TMA prepulse optimization.

170

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