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Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
Type:
Journal
Info:
Materials Chemistry and Physics Volume 184, 1 December 2016, Pages 291-297
Date:
2016-09-17
Author Information
| Name | Institution |
|---|---|
| Wei-Cheng Wang | National Taiwan University |
| Meng-Chen Tsai | National Taiwan University |
| Yi-Ping Lin | National Taiwan University |
| Yi-Jen Tsai | National Taiwan University |
| Hsin-Chih Lin | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma Al2O3
Plasma AlN
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Notes
| 971 |