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Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 11, PP. 1379-1382, 2016
Date:
2016-09-27
Author Information
| Name | Institution |
|---|---|
| Yi-He Tsai | National Chiao Tung University |
| Chen-Han Chou | National Chiao Tung University |
| An-Shih Shih | National Chiao Tung University |
| Yu-Hau Jau | National United University |
| Wen-Kuan Yeh | National Nano Device Labs |
| Yu-Hsien Lin | National United University |
| Fu-Hsiang Ko | National Chiao Tung University |
| Chao-Hsin Chien | National Chiao Tung University |
Films
Plasma HfO2
Plasma Al2O3
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: -
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| GeO2 |
| Al2O3 |
Notes
| 943 |