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Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
Type:
Journal
Info:
Applied Surface Science 305 (2014) 214-220
Date:
2014-03-05
Author Information
| Name | Institution |
|---|---|
| Jhih-Jie Huang | National Taiwan University |
| Li-Tien Huang | National Taiwan University |
| Meng-Chen Tsai | National Taiwan University |
| Min-Hung Lee | National Taiwan Normal University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma ZrO2
Plasma ZrON
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 175923-04-3
CAS#: 7782-44-7
CAS#: 7664-41-7
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interfacial Layer
Analysis: PL, PhotoLuminescence
Substrates
Notes
| 981 |