Publication Information

Title: Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 32, 031508 (2014)

Date: 2014-03-24

DOI: http://dx.doi.org/10.1116/1.4870381

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range N/A

75-24-1

7727-37-9

1333-74-0

Deposition Temperature Range N/A

1445-79-0

7727-37-9

1333-74-0

Deposition Temperature Range N/A

75-24-1

1445-79-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Transmittance

Spectrophotometry

Ocean Optics HR4000CG-UV-NIR

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Optical Bandgap

Ellipsometry

J.A. Woollam VASE

Thermal Stability

Anneal

ATV-Unitherm RTA SRO-704

Substrates

Si(100)

Sapphire

Keywords

III-Nitride

PEALD Film Development

Notes

Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water.

Si HF dipped and rinsed with deionized water.

Tauc-Lorentz (TL) discussed for SE measurements.

Meaglow Ltd hollow cathode RF-plasma source was used.

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