Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 32, 031508 (2014)
Date:
2014-03-24
Author Information
| Name | Institution |
|---|---|
| Eda Goldenberg | Bilkent University |
| Çağla Özgit | Bilkent University |
| Necmi Biyikli | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
Films
Plasma AlN
Plasma GaN
Plasma AlxGa1-xN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Transmittance
Analysis: Spectrophotometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Optical Bandgap
Analysis: Ellipsometry
Characteristic: Thermal Stability
Analysis: Anneal
Substrates
| Si(100) |
| Sapphire |
Notes
| Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water. |
| Si HF dipped and rinsed with deionized water. |
| Tauc-Lorentz (TL) discussed for SE measurements. |
| Meaglow Ltd hollow cathode RF-plasma source was used. |
| 66 |