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Publication Information

Title: Demonstration of flexible thin film transistors with GaN channels

Type: Journal

Info: Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)

Date: 2016-11-25

DOI: http://dx.doi.org/10.1063/1.4971837

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 200C

1115-99-7

7727-37-9

1333-74-0

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Transistor Characteristics

Transistor Characterization

Keithley 4200-SCS

Substrates

Al

SiO2

Keywords

Notes

852



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