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Demonstration of flexible thin film transistors with GaN channels

Type:
Journal
Info:
Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)
Date:
2016-11-25
DOI:
http://dx.doi.org/10.1063/1.4971837

Author Information

Name Institution
S. BolatBilkent University
Z. SismanBilkent University
Ali Kemal OkyayBilkent University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Keithley 4200-SCS

Substrates

Al
SiO2

Notes

852