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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Demonstration of flexible thin film transistors with GaN channels
Type:
Journal
Info:
Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)
Date:
2016-11-25
Author Information
| Name | Institution |
|---|---|
| S. Bolat | Bilkent University |
| Z. Sisman | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
Films
Plasma GaN
Plasma Al2O3
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Al |
| SiO2 |
Keywords
Notes
| 852 |