Demonstration of flexible thin film transistors with GaN channels
Type:
Journal
Info:
Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)
Date:
2016-11-25
Author Information
| Name | Institution |
|---|---|
| S. Bolat | Bilkent University |
| Z. Sisman | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
Films
Plasma GaN
Plasma Al2O3
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Al |
| SiO2 |
Notes
| 852 |