Publication Information

Title:
Demonstration of flexible thin film transistors with GaN channels
Type:
Journal
Info:
Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)
Date:
2016-11-25

Author Information

Name Institution
S. BolatBilkent University
Z. SismanBilkent University
Ali Kemal OkyayBilkent University

Films


Plasma Al2O3


Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Al
SiO2

Keywords

Notes

852