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Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
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Publication Information
Title:
Demonstration of flexible thin film transistors with GaN channels
Type:
Journal
Info:
Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)
Date:
2016-11-25
Author Information
| Name | Institution |
|---|---|
| S. Bolat | Bilkent University |
| Z. Sisman | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
Films
Plasma GaN
Plasma Al2O3
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Al |
| SiO2 |
Keywords
Notes
| 852 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |