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Publication Information

Title: Demonstration of flexible thin film transistors with GaN channels

Type: Journal

Info: Applied Physics Letters 109, le{doi:10.1063/1.4971837 (2016)

Date: 2016-11-25

DOI: http://dx.doi.org/10.1063/1.4971837

Author Information

Name

Institution

S. Bolat

Bilkent University

Z. Sisman

Bilkent University

Ali Kemal Okyay

Bilkent University

Films

Plasma GaN using Cambridge NanoTech Fiji

Deposition Temperature = 200C

Triethyl Gallium, TEG

1115-99-7

Where to buy precursor

Nitrogen, N2

7727-37-9

Hydrogen, H2

1333-74-0

Plasma Al2O3 using Cambridge NanoTech Fiji

Deposition Temperature = 200C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Transistor Characteristics

Transistor Characterization

Keithley 4200-SCS

Substrates

Al

SiO2

Keywords

Notes

852


Mark Sowa

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