Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films

Type:
Journal
Info:
ECS Transactions, 58 (10) 289-297 (2013)
Date:
2013-11-01

Author Information

Name Institution
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN


Plasma AlN



Plasma GaN


Plasma GaN


Plasma GaN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Substrates

Si(100)
Si(111)

Keywords

Notes

Compares Fiji plasma source with hollow cathode source.
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