Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
Type:
Journal
Info:
ECS Transactions, 58 (10) 289-297 (2013)
Date:
2013-11-01
Author Information
| Name | Institution |
|---|---|
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma AlN
Plasma AlN
Plasma AlN
Plasma GaN
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Substrates
| Si(100) |
| Si(111) |
Notes
| Compares Fiji plasma source with hollow cathode source. |
| 587 |