Publication Information

Title: Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 01A137 (2016)

Date: 2015-11-30

DOI: http://dx.doi.org/10.1116/1.4937725

Author Information

Name

Institution

Marmara University

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature = 200C

1445-79-0

7727-37-9

1333-74-0

Deposition Temperature = 200C

1115-99-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Optical Band Edge

Ellipsometry

J.A. Woollam VASE

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Park Systems, XE-100

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Bruker Vertex 70

Substrates

Si(100)

Keywords

Notes

Meaglow hollow cathode plasma source.

441



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