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Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 01A137 (2016)
Date:
2015-11-30
Author Information
| Name | Institution |
|---|---|
| Mustafa Alevli | Marmara University |
| Ali Haider | Bilkent University |
| Seda Kizir | Bilkent University |
| Shahid Ali Leghari | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Optical Band Edge
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Si(100) |
Notes
| Meaglow hollow cathode plasma source. |
| 441 |