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Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition

Type:
Conference Proceedings
Info:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2016-04-01
DOI:
http://dx.doi.org/10.1109/ELNANO.2016.7493030

Author Information

Name Institution
Ali HaiderBilkent University
Seda KizirBilkent University
Petro DeminskyiBilkent University
O. TsymbalenkoBilkent University
Shahid Ali LeghariBilkent University
Necmi BiyikliBilkent University
Mustafa AlevliMarmara University
N. GungorMarmara University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-450C

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-450C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

Silicon
Quartz

Notes

Meaglow plasma.
793