Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
Type:
Conference Proceedings
Info:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2016-04-01
Author Information
| Name | Institution |
|---|---|
| Ali Haider | Bilkent University |
| Seda Kizir | Bilkent University |
| Petro Deminskyi | Bilkent University |
| O. Tsymbalenko | Bilkent University |
| Shahid Ali Leghari | Bilkent University |
| Necmi Biyikli | Bilkent University |
| Mustafa Alevli | Marmara University |
| N. Gungor | Marmara University |
Films
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Substrates
| Silicon |
| Quartz |
Notes
| Meaglow plasma. |
| 793 |