Publication Information

Title:
Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
Type:
Conference Proceedings
Info:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2016-04-01

Author Information

Name Institution
Ali HaiderBilkent University
Seda KizirBilkent University
Petro DeminskyiBilkent University
O. TsymbalenkoBilkent University
Shahid Ali LeghariBilkent University
Necmi BiyikliBilkent University
Mustafa AlevliMarmara University
N. GungorMarmara University

Films

Plasma GaN


Plasma GaN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Substrates

Silicon
Quartz

Keywords

Precursor Comparison

Notes

Meaglow plasma.
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