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Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD

Type:
Journal
Info:
ECS Transactions, 50 (13) 93-103 (2013)
Date:
2012-06-04
DOI:
http://dx.doi.org/10.1149/05013.0093ecst

Author Information

Name Institution
Stephen E. PottsEindhoven University of Technology
H. B. ProfijtEindhoven University of Technology
Robin RoelofsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Substrates

Si with native oxide

Notes

578