2022 Year in Review

August 2023 Stats


The publication database currently has 1695 entries.
210 Films
283 Precursors
78 Dep Hardware Sets
255 Characteristics
96 Theses
5204 Authors

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2021 Year in Review
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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films Gallium nitride thin films by microwave plasma-assisted ALD Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium

Valence Band Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Valence Band returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
2Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
3Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
4Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
5Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3
6Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
7Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
8Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
9Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4

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