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Publication Information

Title: Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

Type: Conference Proceedings

Info: 2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)

Date: 2016-04-19

DOI: http://dx.doi.org/10.1109/ELNANO.2016.7493029

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

National Academy of Science of Ukraine

National Academy of Science of Ukraine

National Academy of Science of Ukraine

National Academy of Science of Ukraine

National Academy of Science of Ukraine

National Academy of Science of Ukraine

Films

Deposition Temperature = 200C

1115-99-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Refractive Index

Ellipsometry

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

Notes

871



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