Publication Information

Title:
Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
Type:
Conference Proceedings
Info:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2016-04-19

Author Information

Name Institution
Petro DeminskyiBilkent University
Ali HaiderBilkent University
Necmi BiyikliBilkent University
A. OvsianitskyNational Academy of Science of Ukraine
O. TsymbalenkoNational Academy of Science of Ukraine
D. KotovNational Academy of Science of Ukraine
V. MatkivskyiNational Academy of Science of Ukraine
N. LiakhovaNational Academy of Science of Ukraine
V. OsinskyNational Academy of Science of Ukraine

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Keywords

Notes

871