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Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

Type:
Conference Proceedings
Info:
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
Date:
2016-04-19
DOI:
http://dx.doi.org/10.1109/ELNANO.2016.7493029

Author Information

Name Institution
Petro DeminskyiBilkent University
Ali HaiderBilkent University
Necmi BiyikliBilkent University
A. OvsianitskyNational Academy of Science of Ukraine
O. TsymbalenkoNational Academy of Science of Ukraine
D. KotovNational Academy of Science of Ukraine
V. MatkivskyiNational Academy of Science of Ukraine
N. LiakhovaNational Academy of Science of Ukraine
V. OsinskyNational Academy of Science of Ukraine

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

871