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Publication Information

Title: Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

Type: Journal

Info: AIP ADVANCES 6, 045203 (2016)

Date: 2016-03-31

DOI: http://dx.doi.org/10.1063/1.4946786

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 150-350C

3385-78-2

7727-37-9

Deposition Temperature = 200C

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

FEI Nova 600i Nanolab

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

PSIA XE-100E

Images

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

FEI Tecnai G2 F30

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

FEI Tecnai G2 F30

Transmittance

Optical Transmission

Ocean Optics HR4000CG-UV-NIR

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Substrates

Si(100)

Quartz

Keywords

Notes

Meaglow plasma source.

782



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