Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
Type:
Journal
Info:
AIP ADVANCES 6, 045203 (2016)
Date:
2016-03-31
Author Information
| Name | Institution |
|---|---|
| Ali Haider | Bilkent University |
| Seda Kizir | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma InN
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Substrates
| Si(100) |
| Quartz |
Notes
| Meaglow plasma source. |
| 782 |