Publication Information

Title:
Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Type:
Journal
Info:
Optical Engineering 53(10), 107106 (October 2014)
Date:
2014-09-11

Author Information

Name Institution
Burak TekcanBilkent University
Çağla ÖzgitBilkent University
S. BolatBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Photocurrent
Analysis: Custom

Substrates

SiO2

Keywords

Photodetectors

Notes

Ultratech Fiji PEALD GaN for UV MSM photodetector.
Meaglow plasma source used.
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