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Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Type:
Journal
Info:
Optical Engineering 53(10), 107106 (October 2014)
Date:
2014-09-11
DOI:
http://dx.doi.org/10.1117/1.OE.53.10.107106

Author Information

Name Institution
Burak TekcanBilkent University
Çağla ÖzgitBilkent University
S. BolatBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Photocurrent
Analysis: Custom
Diagnostic: Custom

Substrates

SiO2

Notes

Ultratech Fiji PEALD GaN for UV MSM photodetector.
Meaglow plasma source used.
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