Publication Information

Title:
Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 34(1), Jan/Feb 2016
Date:
2015-11-10

Author Information

Name Institution
Mustafa AlevliMarmara University
N. GungorMarmara University
Ali HaiderBilkent University
Seda KizirBilkent University
Shahid Ali LeghariBilkent University
Necmi BiyikliBilkent University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Substrates

Si(100)
Quartz

Keywords

Notes

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