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Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
J. Vac. Sci. Technol. A 34(1), Jan/Feb 2016
Date:
2015-11-10
Author Information
| Name | Institution |
|---|---|
| Mustafa Alevli | Marmara University |
| N. Gungor | Marmara University |
| Ali Haider | Bilkent University |
| Seda Kizir | Bilkent University |
| Shahid Ali Leghari | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Si(100) |
| Quartz |
Notes
| 979 |