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Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 34(1), Jan/Feb 2016
Date:
2015-11-10
DOI:
http://dx.doi.org/10.1116/1.4936230

Author Information

Name Institution
Mustafa AlevliMarmara University
N. GungorMarmara University
Ali HaiderBilkent University
Seda KizirBilkent University
Shahid Ali LeghariBilkent University
Necmi BiyikliBilkent University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-450C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-100

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 70

Substrates

Si(100)
Quartz

Notes

979