Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Ion Energy Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Ion Energy returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
2Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
3Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
4Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
5Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
6Innovative remote plasma source for atomic layer deposition for GaN devices
7Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
8Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films
9Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate
10Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
11Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
12The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
13Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth