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Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 041511 (2016)
Date:
2016-05-24
DOI:
http://dx.doi.org/10.1116/1.4953463

Author Information

Name Institution
Seda KizirBilkent University
Ali HaiderBilkent University
Necmi BiyikliBilkent University

Films

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Nova NanoSEM 600

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Substrates

Si(100)
Si(111)
Sapphire

Notes

908