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Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

Type:
Journal
Info:
Semicond. Sci. Technol. 31, 075003
Date:
2016-05-06
DOI:
http://dx.doi.org/10.1088/0268-1242/31/7/075003

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
Turkan BayrakBilkent University
Seda KizirBilkent University
Ali HaiderBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Current Transport Mechanism
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Diagnostic: Cary Varian 100 UV-Vis Spectrometer

Substrates

Si(100)

Notes

Meaglow plasma source.
1398