Publication Information

Title:
Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
Semicond. Sci. Technol. 31, 075003
Date:
2016-05-06

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
Turkan BayrakBilkent University
Seda KizirBilkent University
Ali HaiderBilkent University
Necmi BiyikliBilkent University

Films


Film/Plasma Properties

Characteristic: Current Transport Mechanism
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy

Substrates

Si(100)

Keywords

Notes

Meaglow plasma source.
1398