Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
Type:
Journal
Info:
J. Am. Ceram. Soc., 1-8 (2014)
Date:
2014-08-06
Author Information
| Name | Institution |
|---|---|
| Ali Haider | Bilkent University |
| Çağla Özgit | Bilkent University |
| Eda Goldenberg | Bilkent University |
| Ali Kemal Okyay | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma BN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Elemental Mapping
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
| Silicon |
| Quartz |
Notes
| Substrates cleaned with 2-propanol, acetone, methanol, and DI-water. |
| Si substrates received HF dip, DI-water rinse, and N2 dry. |
| Meaglow Ltd hollow cathode RF-plasma source was used. |
| 111 |