Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020927 (2019)
Date:
2019-02-11
Author Information
| Name | Institution |
|---|---|
| Adnan Mohammad | University of Connecticut |
| Deepa Shukla | University of Connecticut |
| Saidjafarzoda Ilhom | University of Connecticut |
| Brian Willis | University of Connecticut |
| Blaine Johs | Film Sense LLC |
| Ali Kemal Okyay | Stanford University |
| Necmi Biyikli | University of Connecticut |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Silicon |
Notes
| 1267 |