Publication Information

Title:
Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 020927 (2019)
Date:
2019-02-11

Author Information

Name Institution
Adnan MohammadUniversity of Connecticut
Deepa ShuklaUniversity of Connecticut
Saidjafarzoda IlhomUniversity of Connecticut
Brian WillisUniversity of Connecticut
Blaine JohsFilm Sense LLC
Ali Kemal OkyayStanford University
Necmi BiyikliUniversity of Connecticut

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Morphology, Roughness, Topography
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Keywords

Notes

1267