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Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 593, 2014, Pages 190-195
Date:
2014-01-06
DOI:
http://dx.doi.org/10.1016/j.jallcom.2014.01.029

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
İnci DönmezBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University

Films

Plasma Ga2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Asylum Research MFP-3D

Substrates

Si(111)

Notes

980