
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
Type:
Journal
Info:
Journal of Alloys and Compounds, Volume 593, 2014, Pages 190-195
Date:
2014-01-06
Author Information
Name | Institution |
---|---|
Halit Altuntas | Cankiri Karatekin University |
İnci Dönmez | Bilkent University |
Çağla Özgit | Bilkent University |
Necmi Biyikli | Bilkent University |
Films
Plasma Ga2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
Si(111) |
Keywords
Notes
980 |