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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
TDMAV, (Me2N)4V, [(CH3)2N]4V, Tetrakis(DiMethylAmido) Vanadium, Vanadium Dimethylamide, CAS# 19824-56-7
Where to buy
| Number | Vendor | Region | Link |
|---|---|---|---|
| 1 | Ereztech | 🇺🇸 | Tetrakis(dimethylamino) vanadium(IV) |
| 2 | Pegasus Chemicals | 🇬🇧 | Tetrakis(dimethylamino)vanadium |
| 3 | Strem Chemicals, Inc. | 🇺🇸 | Tetrakis(dimethylamino)vanadium(IV), min. 95% TDMAV |
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Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for publications using this chemistry returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.