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The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

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Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)

Type:
Conference Proceedings
Info:
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530C (August 26, 2015);
Date:
2015-08-09
DOI:
http://dx.doi.org/10.1117/12.2190261

Author Information

Name Institution
Necmi BiyikliBilkent University
Çağla ÖzgitBilkent University
Hamit ErenBilkent University
Ali HaiderBilkent University
Tamer UyarBilkent University
Fatma KayaciBilkent University
Mustafa Ozgur GulerBilkent University
Ruslan GarifullinBilkent University
Ali Kemal OkyayBilkent University
Gamze M. UlusoyBilkent University
Eda GoldenbergBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

Review talk covering ZnO, TiO2, HfO2, ZrO2, Al2O3, AlN, GaN, InN, and BN. Difficult to determine what films used PEALD from abstract. See authors other publications for details on their plasma ALD films.
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